我司产品主要有
1,Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.
2,high speed SRAM(同步、异步高速静态随机存储器8ns,10ns,12ns）1Mbit~16Mbit.
3,Serial SRAM(串行静态随机存储器)64Kbit~512Kbit.
4,PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.
5,Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.
6,Die(祼片)1Mbit~64Mbit.
7.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit
8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit
9.DDR2 SDRAM,DDR3 SDRAM(512Mbit~4Gbit)
10.SPI Nor Flash （64Mbit）
可与ISSI（芯成）,Lyontek（来扬）,Cypress（赛普拉斯）,BSI（连邦）的SRAM 完全替代。
ISSI型号及参数如下
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型号 参数
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IS61LV12816L-10TL-TR 2Mb 128Kx16 10ns 3.3v
IS61QDB21M36-250M3L 36M (1Mx36) 250ns Commercial Temp
IS62WV2568BLL-55TLI 2Mb 256Kx8 55ns 2.5v-3.6v
IS62WV51216BLL-55TLI 8Mb 512Kx16 55ns 2.5v/3.6v
IS61LV256AL-10TLI 256K 32Kx8 10ns 3.3V Industrial Temp
IS61LV25616AL-10BLI 4Mb 256Kx16 10ns 3.3v
IS61LV25616AL-10TLI 4Mb 256Kx16 10ns 3.3v
IS62C256AL-45ULI 256K 32K x 8 45ns 5v
IS62WV1288DBLL45HLI 1Mb 128Kx8 45ns 2.5V-3.6V Industrial
IS62WV25616BLL-55BLI 4Mb 256Kx16 55ns 2.5v-3.6v
IS61QDB22M18-250M3L 36Mb 2Mbx18
IS61WV6416BLL-12TLI 1Mb 64Kx16 12ns/ 3.3v or 15ns/2.5v-3.6v
IS61NLP102418-200TQLI 18Mb 1Mbx18 200Mhz 3.3V/2.5V I/O
IS62WV25616BLL-55TLI 4Mb 256Kx16 55ns 2.5v-3.6v
IS61C256AL-12TLI 256K 32Kx8 12ns 5V Industrial Temp
IS62WV1288BLL-55HLI 1Mb 128Kx8 55ns 2.5v-3.6v
IS61LV6416-10TL 256K 32Kx8 12ns 5V Industrial Temp
IS62C1024AL-35QLI 1Mb 128K x 8 35ns 5v
IS61LV12816L-10TL 1Mb 64Kx16 10ns 3.3v
IS61LV256AL-10JLI 256K 32Kx8 10ns 3.3v
IS61C1024AL-12KLI 1Mb 128Kx8 12ns 5v
IS61LV5128AL-10TLI 4Mb 512Kx8 10ns 3.3v
IS62WV1288BLL-55TLI 1Mb 128Kx8 55ns 2.5v-3.6v
IS61LV25616AL-10TL 4Mb 256Kx16 10ns 3.3v
IS61C256AL-12JLI 256K 32Kx8 12ns 5V Industrial Temp
IS66WV25616BLL-55BLI 4M (256Kx16) 55ns Industrial Temp
IS62LV256AL-45TLI 256K 32Kx8 45ns 3.3v
IS61C1024AL-12JLI 1Mb 128Kx8 12ns 5v
IS66WV51216BLL-55BLI 8M (512Kx16) 55ns Industrial Temp
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